Like all semiconductors, silicon carbide (SiC) and gallium nitride (GaN) have an energy gap separating the electron energy levels that are normally filled with electrons from those that are normally empty of electrons. Both SiC and GaN have high bond strengths, making them suitable for high-temperature applications. Their wide band gaps also permit a number of novel applications for the materials, including blue and ultra-violet light-emitting devices as well as high-power and high-speed electronic devices. Porous layers of SiC or GaN can be formed by photo-electro-chemical etching, and these porous layers have unique properties and applications such as electronic/optical devices, fuel cells, catalytic sensors, and semipermeable membranes.
The book presents the state-of-the-art in knowledge and applications of porous semiconductor materials having a wide band gap, and the underlying scientific basis for each application area is described. The book starts with an overview of porous wide-band-gap technology. The coverage includes preparation, characterization, morphology and processing of porous SiC, growth of SiC, preparation and properties of porous GaN, growth of GaN, dislocation mechanism GaN films, electrical properties of porous SiC, magnetism of GaN nanostructures, SiC catalysis technology and nanoporous silicon carbide as a biomembrane for medical use.
This book gives both experts and nonexperts a good overview of porous semiconductors. The book is aimed at researchers intending to pursue work relating to porous wide-band-gap semiconductors in the manufacturing/semiconductor industry. It will also appeal to postgraduate students and researchers in materials science, engineering, chemistry, and nanotechnology.
